XQ4VSX55-10FF1148M

Product Summary

The XQ4VSX55-10FF1148M is available in -10 speed grade and qualified for industrial (TJ = –40°C to +100°C), and for military (TJ = –55°C to +125°C) operational temperatures. XQ4VSX55-10FF1148M characteristics are specified for military and industrial grades only. Except the operating temperature range or unless otherwise noted, all the DC and AC electrical parameters are the same for a particular speed grade (that is, the timing characteristics of a -10 speed grade military device are the same as for a -10 speed grade industrial device). All supply voltage and junction temperature specifications are representative of worst-case conditions. The parameters included are common to popular designs and typical applications.

Parametrics

Absolute maximum ratings:(1)Internal supply voltage relative to GND, VCCINT: –0.5 to 1.32V; (2)Auxiliary supply voltage relative to GND, VCCAUX: –0.5 to 3.0V; (3)Output drivers supply voltage relative to GND, VCCO: –0.5 to 3.75V; (4)Key memory battery backup supply, VBATT: –0.5 to 4.05V; (5)Input reference voltage, VREF: –0.3 to 3.75V; (6)I/O input voltage relative to GND (all user and dedicated I/Os), VIN: –0.75 to 4.05V; (7)I/O input voltage relative to GND(3) (restricted to maximum of 100 user I/Os), VIN: –0.85 to 4.3V; (8)2.5V or below I/O input voltage relative to GND (user and dedicated I/Os), VIN: –0.75 to VCCO + 0.5V; (9)Voltage applied to 3-state 3.3V output(3) (all user and dedicated I/Os), VTS: –0.75 to 4.05V; (10)Voltage applied to 3-state 3.3V output(3) (restricted to maximum of 100 user I/Os), VTS: –0.85 to 4.3V; (11)2.5V or below I/O input voltage relative to GND (user and dedicated I/Os), VTS: –0.75 to VCCO + 0.5V; (12)Terminal receive supply voltage relative to GND, VTRX: –0.5 to 3.0V; (13)Terminal transmit supply voltage relative to GND, VTTX: –0.5 to 1.65V; (14)Storage temperature (ambient), TSTG: –65 to 150°C; (15)Maximum soldering temperature, TSOL: +220°C; (16)Maximum junction temperature, TJ: +125°C.

Features

Features:(1)available soon after device design specifications are frozen; (2)relatively stable and conservative, some underreporting might still occur; (3)give a better indication of the expected performance of production silicon; (4)The probability of under-reporting delays is greatly reduced as compared to Advance data.

Diagrams